Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin
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| Veröffentlicht in: | Ukrainian journal of physics (Kiev) 2013-01, Vol.58 (8), p.769-772 |
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| Sprache: | eng |
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| container_end_page | 772 |
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| container_title | Ukrainian journal of physics (Kiev) |
| container_volume | 58 |
| creator | Rudenko, R.M. Voitovych, V.V. Kras’ko, M.M. Kolosyuk, A.G. Kraichynskyi, A.M. Yukhymchuk, V.O. Makara, V.A. |
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| doi_str_mv | 10.15407/ujpe58.08.0769 |
| format | Article |
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| identifier | ISSN: 2071-0186 |
| ispartof | Ukrainian journal of physics (Kiev), 2013-01, Vol.58 (8), p.769-772 |
| issn | 2071-0186 2071-0194 |
| language | eng |
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| source | Alma/SFX Local Collection |
| title | Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin |
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