Experimental study and theoretical analysis of photoelectric characteristics of AlxGa1–xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces

Experimental study and theoretical analysis of photoelectric characteristics of AlxGa1–xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces

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Veröffentlicht in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2005-05, Vol.8 (1), p.72-78
1. Verfasser: Dmitruk, N. L.
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title Experimental study and theoretical analysis of photoelectric characteristics of AlxGa1–xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
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