Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

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Veröffentlicht in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 1999-05, Vol.2 (1), p.153-156
Hauptverfasser: Serdega, B. K., Venger, Ye. F., Nikitenko, Ye. V.
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title Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
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