Features of current transport in Al–Al2O3–p-CdTe–Mo structure

The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.