STRUCTURAL AND PHOTOELECTRONIC FEATURES OF NOVEL VANADATE GLASS

A recent vanadate glass within the composition as follows; 50V2O5-30Ag2O- 20SrO was prepared in the mol % through a melt-quenching technique. In this paper, the glass transition,Tg, softening temperature, Ts , and the peak of crystallization, TP, of the present glass determined by using differential thermal analysis (DTA). Moreover, the transient photoconductivity measured at different temperatures in the range 294- 500 K with the intensity of illumination such as; 2000, 3500, 5900, 9400, 13900, 19700, and 26000 lx. The results of dark conductivity and photoconductivity σph obtained that the conduction mechanism in present glass having two regimes activation energy at the temperature range from 294 to 500 K. The value of σph and at 297 K was equal 2.604×10-3  -1 ∙ cm-1 and 2.604×10-3  -1 ∙ cm-1 , respectively. Herein the values of activation energy ∆ 1 ℎ and ∆ 2 ℎ are equal to 0.285 and 0.052 eV for region Ith and II, respectively. Both and σph increases linearly with a voltage change in the studied range from 0.2 to 5.0 V. The XRDpattern shows a distinct line attributed to the crystalline phase Sr2V2O7 (ICDD card: 00- 048-0145) moreover, the diffraction peaks at 2= 38.3o , 44.5o , and 64.8o are assigned to (111), (200) and (220) peaks of Ag (JCPDS4-0783). The crystallite size of the Ag+ with heat treatment of present glass, which found that equal micro-sized particle 7 m in the glass matrix. Finally, we found that, the ℎ value of the prepared glass is larger than that compared to different glass compositions reported in the literature. Hence the prepared glass is promising as a candidate in optoelectronic devices.