Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes
We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our meas...
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| Veröffentlicht in: | Zeitschrift für Naturforschung. A, A journal of physical sciences A journal of physical sciences, 2004-11, Vol.59 (11), p.795-798 |
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| container_title | Zeitschrift für Naturforschung. A, A journal of physical sciences |
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| creator | Çankaya, Güven Uçar, Nazım |
| description | We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕ
/ϕ
) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 10
1/eV per cm
, and the average pinning position of the Fermi level as 0.661 eV below the conduction band |
| doi_str_mv | 10.1515/zna-2004-1112 |
| format | Article |
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/ϕ
) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 10
1/eV per cm
, and the average pinning position of the Fermi level as 0.661 eV below the conduction band</description><identifier>ISSN: 0932-0784</identifier><identifier>EISSN: 1865-7109</identifier><identifier>DOI: 10.1515/zna-2004-1112</identifier><language>eng</language><publisher>Verlag der Zeitschrift für Naturforschung</publisher><subject>Barrier Height ; Miedema Electronegativity ; Schottky Diodes ; Series Resistance ; Work Function</subject><ispartof>Zeitschrift für Naturforschung. A, A journal of physical sciences, 2004-11, Vol.59 (11), p.795-798</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-c7c1c29139217d7cb558ba58f3fc23ce6b0b2c8ecb3fbdf3eee06859c58d09dc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Çankaya, Güven</creatorcontrib><creatorcontrib>Uçar, Nazım</creatorcontrib><title>Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes</title><title>Zeitschrift für Naturforschung. A, A journal of physical sciences</title><description>We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕ
/ϕ
) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 10
1/eV per cm
, and the average pinning position of the Fermi level as 0.661 eV below the conduction band</description><subject>Barrier Height</subject><subject>Miedema Electronegativity</subject><subject>Schottky Diodes</subject><subject>Series Resistance</subject><subject>Work Function</subject><issn>0932-0784</issn><issn>1865-7109</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNptkE9Lw0AUxBdRsFaP3vcLrO6fbjYLXrS1Vqh4qOLBQ9i8fWnT1iRstpT46U2pePL0hsfMMPwIuRb8Rmihb78rxyTnIyaEkCdkINJEMyO4PSUDbpVk3KSjc3LRtmvOVaLNaEA-F7CqY9x09MGFUGKgMyyXq0gn2GDlsQKkdUXjCukLRrelH3XY0Omuglj2_6IOtGGxa5AuSvrXNSlrj-0lOSvctsWr3zsk79PHt_GMzV-fnsf3cwZK2sjAgABphbJSGG8g1zrNnU4LVYBUgEnOcwkpQq6K3BcKEXmSags69dx6UEPCjr0Q6rYNWGRNKL9c6DLBswOZrCeTHchkBzK9_-7o37ttxOBxGXZdL7J1vQtVv_T_nLZCGKvVDwhWa-A</recordid><startdate>20041101</startdate><enddate>20041101</enddate><creator>Çankaya, Güven</creator><creator>Uçar, Nazım</creator><general>Verlag der Zeitschrift für Naturforschung</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20041101</creationdate><title>Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes</title><author>Çankaya, Güven ; Uçar, Nazım</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-c7c1c29139217d7cb558ba58f3fc23ce6b0b2c8ecb3fbdf3eee06859c58d09dc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Barrier Height</topic><topic>Miedema Electronegativity</topic><topic>Schottky Diodes</topic><topic>Series Resistance</topic><topic>Work Function</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Çankaya, Güven</creatorcontrib><creatorcontrib>Uçar, Nazım</creatorcontrib><collection>CrossRef</collection><jtitle>Zeitschrift für Naturforschung. A, A journal of physical sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Çankaya, Güven</au><au>Uçar, Nazım</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes</atitle><jtitle>Zeitschrift für Naturforschung. A, A journal of physical sciences</jtitle><date>2004-11-01</date><risdate>2004</risdate><volume>59</volume><issue>11</issue><spage>795</spage><epage>798</epage><pages>795-798</pages><issn>0932-0784</issn><eissn>1865-7109</eissn><abstract>We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕ
/ϕ
) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 10
1/eV per cm
, and the average pinning position of the Fermi level as 0.661 eV below the conduction band</abstract><pub>Verlag der Zeitschrift für Naturforschung</pub><doi>10.1515/zna-2004-1112</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0932-0784 |
| ispartof | Zeitschrift für Naturforschung. A, A journal of physical sciences, 2004-11, Vol.59 (11), p.795-798 |
| issn | 0932-0784 1865-7109 |
| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Barrier Height Miedema Electronegativity Schottky Diodes Series Resistance Work Function |
| title | Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes |
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