Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes
We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our meas...
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Veröffentlicht in: | Zeitschrift für Naturforschung. A, A journal of physical sciences A journal of physical sciences, 2004-11, Vol.59 (11), p.795-798 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕ
/ϕ
) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 10
1/eV per cm
, and the average pinning position of the Fermi level as 0.661 eV below the conduction band |
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ISSN: | 0932-0784 1865-7109 |
DOI: | 10.1515/zna-2004-1112 |