The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction

A poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φ ), ideality factor ( ), reverse current ( ) and series resistance ( ), were investigated. It was seen that the Φ and the values of the device increased with increasing temperature, while the and the values decreased. The temperature dependences of the Φ and the were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln( ) vs. 1/ plot, the values of the activation energy ( ) and Richardson constant ( *) were calculated as 0.324 eV and 2.84×10 A cm , respectively. The experimental value of the from the forward current-voltage plots decreased with an increase in the temperature.