Angle-Resolved XPS Studies of GaAs/GaP Growth Surface
The early growth stages of GaAs films grown on GaP (100) substrates by MBE have been studied by Angle-Resolved XPS. From the results of quantitative analysis of the components of the GaAs/GaP surfaces, it was concluded that the GaAs films grew in the Stranski-Krastanov growth mode.
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| Veröffentlicht in: | Hyomen Kagaku 1988/07/10, Vol.9(5), pp.374-377 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The early growth stages of GaAs films grown on GaP (100) substrates by MBE have been studied by Angle-Resolved XPS. From the results of quantitative analysis of the components of the GaAs/GaP surfaces, it was concluded that the GaAs films grew in the Stranski-Krastanov growth mode. |
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| ISSN: | 0388-5321 1881-4743 |
| DOI: | 10.1380/jsssj.9.374 |