Influences of MBE Growth Conditions on Quantum Efficiency of Negative Electron Affinity GaAs Photocathode

Influences of MBE Growth Conditions on Quantum Efficiency of Negative Electron Affinity GaAs Photocathode

The MBE growth conditions for Be doped GaAs layers are evaluated from quantum efficiency of the negative electron affinity photocathodes made of these layers. The quantum efficiency of the GaAs layers grown by molecular beam epitaxy method at various growth conditions was measured in reflection mode...

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Veröffentlicht in:Hyomen Kagaku 1989/06/20, Vol.10(5), pp.330-334
Hauptverfasser: NAGATSU, Fumiyasu, NOMURA, Takashi, AWANO, Haruyuki, MIYAO, Masahiro, HAGINO, Minoru
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container_end_page 334
container_issue 5
container_start_page 330
container_title Hyomen Kagaku
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creator NAGATSU, Fumiyasu
NOMURA, Takashi
AWANO, Haruyuki
MIYAO, Masahiro
HAGINO, Minoru
description The MBE growth conditions for Be doped GaAs layers are evaluated from quantum efficiency of the negative electron affinity photocathodes made of these layers. The quantum efficiency of the GaAs layers grown by molecular beam epitaxy method at various growth conditions was measured in reflection mode operation. High quantum efficiencies were obtained with Be doping levels between 1018 and 1019 cm-3 at high As/Ga beam flux ratios and high substrate temperatures.
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title Influences of MBE Growth Conditions on Quantum Efficiency of Negative Electron Affinity GaAs Photocathode
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