Influences of MBE Growth Conditions on Quantum Efficiency of Negative Electron Affinity GaAs Photocathode

Influences of MBE Growth Conditions on Quantum Efficiency of Negative Electron Affinity GaAs Photocathode

The MBE growth conditions for Be doped GaAs layers are evaluated from quantum efficiency of the negative electron affinity photocathodes made of these layers. The quantum efficiency of the GaAs layers grown by molecular beam epitaxy method at various growth conditions was measured in reflection mode...

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Veröffentlicht in:Hyomen Kagaku 1989/06/20, Vol.10(5), pp.330-334
Hauptverfasser: NAGATSU, Fumiyasu, NOMURA, Takashi, AWANO, Haruyuki, MIYAO, Masahiro, HAGINO, Minoru
Format: Artikel
Sprache:eng
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Zusammenfassung:The MBE growth conditions for Be doped GaAs layers are evaluated from quantum efficiency of the negative electron affinity photocathodes made of these layers. The quantum efficiency of the GaAs layers grown by molecular beam epitaxy method at various growth conditions was measured in reflection mode operation. High quantum efficiencies were obtained with Be doping levels between 1018 and 1019 cm-3 at high As/Ga beam flux ratios and high substrate temperatures.
ISSN:0388-5321
1881-4743
DOI:10.1380/jsssj.10.330