Link between O 2 SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O 3 Oxidation

Link between O 2 SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O 3 Oxidation

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O 3 ) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH x ( x = 1–3), O y SiH ( y = 1–2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and...

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Veröffentlicht in:Applied spectroscopy 2012-08, Vol.66 (8), p.951-957
Hauptverfasser: Caras, Caley A., Reynard, Justin M., Deuro, Randi E., Bright, Frank V.
Format: Artikel
Sprache:eng
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Zusammenfassung:We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O 3 ) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH x ( x = 1–3), O y SiH ( y = 1–2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O 2 SiH band amplitude.
ISSN:0003-7028
1943-3530
DOI:10.1366/12-06630