Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator

Yttrium iron garnet (YIG) is a promising material for various terahertz applications due to its special optical properties. At present, a high-quality YIG wafer is the desire of terahertz communities and it is still challenging to prepare substrate-free YIG single crystal films. In this work, we pre...

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Veröffentlicht in:Photonics research (Washington, DC) DC), 2024-03, Vol.12 (3), p.505
Hauptverfasser: Zhang, Xilai, Zhao, Dan, Zhang, Ding, Xue, Qiang, Fan, Fei, Liao, Yulong, Yang, Qinghui, Wen, Qiye
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Sprache:eng
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Zusammenfassung:Yttrium iron garnet (YIG) is a promising material for various terahertz applications due to its special optical properties. At present, a high-quality YIG wafer is the desire of terahertz communities and it is still challenging to prepare substrate-free YIG single crystal films. In this work, we prepared wafer-level substrate-free La:YIG single crystal films, for the first time, to our knowledge. Terahertz optical and magneto-optical properties of La:YIG films were characterized by terahertz time domain spectroscopy (THz-TDS). Results show that the as-prepared La:YIG film has an insertion loss of less than 3 dB and a low absorption coefficient of less than 10   cm −1 below 1.6 THz. Benefitting from the thickness of the substrate-free YIG films and low insertion loss, their terahertz properties could be further manipulated by simply using a wafer-stacking technique. When four La:YIG films were stacked, there was an insertion loss of less than 10 dB in the range of 0.1−1.2   THz . The Faraday rotation angle of the four-layer-stacked La:YIG films reached 19°, and the isolation could reach 17 dB. By further increasing the stacking number to eight pieces, a remarkable Faraday rotation angle of 45° was achieved with an isolation of 23 dB, which is important for practical application in the THz band. This material may provide a milestone opportunity to make various non-reciprocal devices, such as isolators and phase shifters.
ISSN:2327-9125
2327-9125
DOI:10.1364/PRJ.509876