Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction

Germanium-on-silicon (Ge-on-Si) avalanche photodiodes (APDs) are widely used in near-infrared detection, laser ranging, free space communication, quantum communication, and other fields. However, the existence of lattice defects at the Ge/Si interface causes a high dark current in the Ge-on-Si APD, degrading the device sensitivity and also increasing energy consumption in integrated circuits. In this work, we propose a novel surface illuminated Ge-on-Si APD architecture with three terminals. Besides two electrodes on Si substrates, a third electrode is designed for Ge to regulate the control current and bandwidth, achieving multiple outputs of a single device and reducing the dark current of the device. When the voltage on Ge is − 27.5 V , the proposed device achieves a dark current of 100 nA, responsivity of 9.97 A/W at − 40 dBm input laser power at 1550 nm, and optimal bandwidth of 142 MHz. The low dark current and improved responsivity can meet the requirements of autonomous driving and other applications demanding weak light detection.