Ultra-violet to near-infrared reflectance of epitaxial aluminum films on GaAs and Si substrates

Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident ref...

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Veröffentlicht in:	Optics continuum 2023-06, Vol.2 (6), p.1450
Hauptverfasser:	Wu, Yu-Hsun, Lin, Sheng-Di
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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