Ultra-violet to near-infrared reflectance of epitaxial aluminum films on GaAs and Si substrates

Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident ref...

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Veröffentlicht in:Optics continuum 2023-06, Vol.2 (6), p.1450
Hauptverfasser: Wu, Yu-Hsun, Lin, Sheng-Di
Format: Artikel
Sprache:eng
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Zusammenfassung:Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident reflection spectra have been measured to investigate their optical properties in ultra-violet to near-infrared regime. Highly reflective aluminum has been demonstrated with a film thickness of only 40 nm. The spectra simulation fits the experimental results very well and the multiple reflections in the semi-transparent films play a key role for verifying the optical constants of aluminum.
ISSN:2770-0208
2770-0208
DOI:10.1364/OPTCON.496299