Ultra-violet to near-infrared reflectance of epitaxial aluminum films on GaAs and Si substrates
Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident ref...
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Veröffentlicht in: | Optics continuum 2023-06, Vol.2 (6), p.1450 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Epitaxial aluminum films in nano-scale thickness has been successfully grown on GaAs and Si substrates by using molecular beam epitaxy. The atomic force microscopy images show their smooth surface morphology while the X-ray diffractions reveal their excellent crystal quality. The normal-incident reflection spectra have been measured to investigate their optical properties in ultra-violet to near-infrared regime. Highly reflective aluminum has been demonstrated with a film thickness of only 40 nm. The spectra simulation fits the experimental results very well and the multiple reflections in the semi-transparent films play a key role for verifying the optical constants of aluminum. |
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ISSN: | 2770-0208 2770-0208 |
DOI: | 10.1364/OPTCON.496299 |