Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO 2 ALD passivation

Micro light-emitting diodes (µLEDs), crucial for advanced displays and communication systems, face efficiency challenges due to sidewall defects. This study investigates the impact of various passivation layers, including SiO 2 , Al 2 O 3 , and HfO 2 , on AlGaInP-based 620 nm red µLEDs. We fabricate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Optics letters 2025-01, Vol.50 (2), p.313
Hauptverfasser:	Prechatavanich, Natchanon, Wu, Ming-June, Yee, Chee-Keong, Sutheebanjerd, Theeradech, Tseng, Yi-Tzu, Yang, Yun-Cheng, Lee, Chia-An, Lin, Kuan-Heng, Wu, Chao-Hsin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!