Sidewall Defects Suppression of 620 nm AlGaInP-based Red µLED Devices Using HfO2 ALD Passivation

Sidewall Defects Suppression of 620 nm AlGaInP-based Red µLED Devices Using HfO2 ALD Passivation

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Veröffentlicht in:Optics letters 2024-11
Hauptverfasser: Prechatavanich, Natchanon, Wu, Ming-June, Yee, Chee Keong, Sutheebanjerd, Theeradech, Tseng, Yi-Tzu, Yang, Yun-Cheng, Lee, Chia-An, Lin, Kuan-Heng, Wu, Chao-Hsin
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container_title Optics letters
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creator Prechatavanich, Natchanon
Wu, Ming-June
Yee, Chee Keong
Sutheebanjerd, Theeradech
Tseng, Yi-Tzu
Yang, Yun-Cheng
Lee, Chia-An
Lin, Kuan-Heng
Wu, Chao-Hsin
description
doi_str_mv 10.1364/OL.543122
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title Sidewall Defects Suppression of 620 nm AlGaInP-based Red µLED Devices Using HfO2 ALD Passivation
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