Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer

We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air am...

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Veröffentlicht in:Optics letters 2008-12, Vol.33 (24), p.2907-2909
Hauptverfasser: JUN HO SON, GWAN HO JUNG, LEE, Jong-Lam
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creator JUN HO SON
GWAN HO JUNG
LEE, Jong-Lam
description We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JUN HO SON</creatorcontrib><creatorcontrib>GWAN HO JUNG</creatorcontrib><creatorcontrib>LEE, Jong-Lam</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JUN HO SON</au><au>GWAN HO JUNG</au><au>LEE, Jong-Lam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer</atitle><jtitle>Optics letters</jtitle><addtitle>Opt Lett</addtitle><date>2008-12-15</date><risdate>2008</risdate><volume>33</volume><issue>24</issue><spage>2907</spage><epage>2909</epage><pages>2907-2909</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><coden>OPLEDP</coden><abstract>We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. 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subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer
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