Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer
We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air am...
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Veröffentlicht in: | Optics letters 2008-12, Vol.33 (24), p.2907-2909 |
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description | We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact. |
doi_str_mv | 10.1364/ol.33.002907 |
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Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/ol.33.002907</identifier><identifier>PMID: 19079488</identifier><identifier>CODEN: OPLEDP</identifier><language>eng</language><publisher>Washington, DC: Optical Society of America</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. 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Solid state devices</subject><ispartof>Optics letters, 2008-12, Vol.33 (24), p.2907-2909</ispartof><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-ab25576776973534ae28a8e2c9a3618bf64475d2305f2f7c409c284e814c77b23</citedby><cites>FETCH-LOGICAL-c354t-ab25576776973534ae28a8e2c9a3618bf64475d2305f2f7c409c284e814c77b23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,3245,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21040837$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19079488$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>JUN HO SON</creatorcontrib><creatorcontrib>GWAN HO JUNG</creatorcontrib><creatorcontrib>LEE, Jong-Lam</creatorcontrib><title>Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer</title><title>Optics letters</title><addtitle>Opt Lett</addtitle><description>We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JUN HO SON</creatorcontrib><creatorcontrib>GWAN HO JUNG</creatorcontrib><creatorcontrib>LEE, Jong-Lam</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JUN HO SON</au><au>GWAN HO JUNG</au><au>LEE, Jong-Lam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer</atitle><jtitle>Optics letters</jtitle><addtitle>Opt Lett</addtitle><date>2008-12-15</date><risdate>2008</risdate><volume>33</volume><issue>24</issue><spage>2907</spage><epage>2909</epage><pages>2907-2909</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><coden>OPLEDP</coden><abstract>We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag-Cu alloy/Ru contact showed low contact resistivity as low as 6.2 x 10(-6) Ohms cm(2) and high reflectance of 91% at 460 nm after annealing at 400 degrees C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag-Cu layer with the formation of an Ag-Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.</abstract><cop>Washington, DC</cop><pub>Optical Society of America</pub><pmid>19079488</pmid><doi>10.1364/ol.33.002907</doi><tpages>3</tpages></addata></record> |
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subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer |
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