Terahertz generation by optical rectification in chalcopyrite crystals ZnGeP 2 , CdGeP 2 and CdSiP 2
Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP , ZnGeP and CdSiP . The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0...
Gespeichert in:
Veröffentlicht in: | Optics express 2019-06, Vol.27 (12), p.16958 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP
, ZnGeP
and CdSiP
. The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0.5 mm, thinner than the coherence length across most of the excitation photon energy range, such that they all produce a bandwidth ~2.5 THz when excited with ~100 fs pulses. It is found that CdGeP
produced the strongest emission at telecoms wavelengths, while CdSiP
is generally the strongest source. Pump-intensity dependence provides the nonlinear coefficients for each crystal. |
---|---|
ISSN: | 1094-4087 1094-4087 |
DOI: | 10.1364/OE.27.016958 |