Terahertz generation by optical rectification in chalcopyrite crystals ZnGeP 2 , CdGeP 2 and CdSiP 2

Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP , ZnGeP and CdSiP . The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0...

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Veröffentlicht in:Optics express 2019-06, Vol.27 (12), p.16958
Hauptverfasser: Piyathilaka, Herath P, Sooriyagoda, Rishmali, Dewasurendra, Vikum, Johnson, Matthew B, Zawilski, Kevin T, Schunemann, Peter G, Bristow, Alan D
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Sprache:eng
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Zusammenfassung:Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP , ZnGeP and CdSiP . The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0.5 mm, thinner than the coherence length across most of the excitation photon energy range, such that they all produce a bandwidth ~2.5 THz when excited with ~100 fs pulses. It is found that CdGeP produced the strongest emission at telecoms wavelengths, while CdSiP is generally the strongest source. Pump-intensity dependence provides the nonlinear coefficients for each crystal.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.27.016958