Damage characteristics of a triple-junction GaAs cell with a subwavelength structured antireflective film

A theoretical model of temperature and stress damage of a triple-junction GaAs solar cell with a conical subwavelength structure antireflection film is proposed to analyze the influence of subwavelength structure on damage characteristics. The distribution of temperature and stress under different cone structure parameters are calculated. Results show that the subwavelength structure will significantly modulate the light field, temperature field, and stress field inside the solar cell. Under the simultaneous influence of reflectivity and conical structure modulation, the melting damage and stress damage thresholds reach the minimum values of 2.485 × 10 7 and 0.49 × 10 7 W / c m 2 when the cone height and bottom diameter are 500 and 750 nm, respectively.