Rotationally disordered illite/smectite in Paleozoic K-bentonites

The three-dimensional crystal structure of rotationally disordered illite/smectite (I/S) in K-bentonite samples from the Appalachian basin and neighboring areas is described using the parameters of 1) P 0 , the proportion of zero-degree layer stacking rotations, such as in the polytype series 1Md-1M...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Clays and clay minerals 1995-06, Vol.43 (3), p.271-284
Hauptverfasser: MCCARTY, D. K, REYNOLDS, R. C
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The three-dimensional crystal structure of rotationally disordered illite/smectite (I/S) in K-bentonite samples from the Appalachian basin and neighboring areas is described using the parameters of 1) P 0 , the proportion of zero-degree layer stacking rotations, such as in the polytype series 1Md-1M ; 2) P cv , the proportion of 2:1 layers with cis -vacant ( cv ) octahedral sites that are randomly interstratified with trans -vacant ( tv ) layers; and 3) P 60 the proportion of layers with n ·60° rotations (as opposed to n ·120°) in the rotated layers. These parameters were determined by computer modeling of experimental randomly oriented powder X-ray diffraction patterns. The proportion of cv interstratification in the I/S increases with A1 and decreases with Mg and Fe content. The proportion of n ·60° rotations in the rotated layers increases with Mg and Fe content. The cv 120° disordered structure correlates with tetrahedral A1 for Si substitution and increasing tetrahedral charge. The tv n ·60° disordered structures correlate with octahedral Mg for A1 substitution. The data indicate that the type of unit cell and nature of rotational disorder in I/S is controlled by the octahedral Mg content. The three-dimensional structures do not show any systematic correlation with Reichweite and percent expandability as determined from diffraction patterns of oriented sample preparations.
ISSN:0009-8604
1552-8367
DOI:10.1346/CCMN.1995.0430302