Transverse magnetoresistance in layered electron systems

We calculate the transverse magnetoresistance in layered electronic systems at nonquantizing magnetic fields parallel and perpendicular to the layer plane and discuss the effect of the relationship between the Fermi level and the mini-band width, and also the direction and magnitude of the magnetic...

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Veröffentlicht in:Europhysics letters 2010-02, Vol.89 (3), p.37004
Hauptverfasser: Figarova, S. R, Figarov, V. R
Format: Artikel
Sprache:eng
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Zusammenfassung:We calculate the transverse magnetoresistance in layered electronic systems at nonquantizing magnetic fields parallel and perpendicular to the layer plane and discuss the effect of the relationship between the Fermi level and the mini-band width, and also the direction and magnitude of the magnetic field on the transverse magnetoresistance and its sign. We show that the transverse magnetoresistance of a degenerate quasi–three-dimensional electron gas in the fields parallel to the layer plane is negative in weak fields and is positive in strong fields.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/89/37004