High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2

Monolayer MoS2 with large area and high quality are grown using chemical vapor deposition (CVD) on Si/SiO2 substrate, the triangle grain size is about 50 μm, and top-gated field-effect transistors (FETs) were fabricated using atomic layer deposition (ALD) grown HfO2 at low temperature as high-k gate insulator. The transistors present typical n-type field-effect properties, especially with high carrier mobility up to about 36.4 cm2/Vs, which is the highest value of mobility of top gated transistors based on CVD-derived single layer MoS2. Two kinds of methods were used to extract mobility from the measured properties of FETs, and the consistent results indicated the retrieved mobility was reliable. In addition an inverter circuit with gain larger than 1 was constructed based on the n-type FETs.