Boron Delta-Doping in Si : B Stacks By RP-CVD Epitaxy

To reach the electrical performance of advanced CMOS technology, the source and drain contact resistance becomes a key figure of merit. By reducing the size of electrical devices, the minimum active carrier concentration required to obtain sufficiently low contact resistance and high-performance inc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Meeting abstracts (Electrochemical Society) 2024-11, Vol.MA2024-02 (32), p.2354-2354
Hauptverfasser:	Ferrandon, Alice, Deprat, Fabien, Vives, Jeremy, Frauenrath, Marvin, Guyader, Veronique, Lacomme, Caroline, Madaci, Ismail, Favre, Luc, Berbezier, Isabelle
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!