Boron Delta-Doping in Si : B Stacks By RP-CVD Epitaxy

Boron Delta-Doping in Si : B Stacks By RP-CVD Epitaxy

To reach the electrical performance of advanced CMOS technology, the source and drain contact resistance becomes a key figure of merit. By reducing the size of electrical devices, the minimum active carrier concentration required to obtain sufficiently low contact resistance and high-performance inc...

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Veröffentlicht in:Meeting abstracts (Electrochemical Society) 2024-11, Vol.MA2024-02 (32), p.2354-2354
Hauptverfasser: Ferrandon, Alice, Deprat, Fabien, Vives, Jeremy, Frauenrath, Marvin, Guyader, Veronique, Lacomme, Caroline, Madaci, Ismail, Favre, Luc, Berbezier, Isabelle
Format: Artikel
Sprache:eng
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Zusammenfassung:To reach the electrical performance of advanced CMOS technology, the source and drain contact resistance becomes a key figure of merit. By reducing the size of electrical devices, the minimum active carrier concentration required to obtain sufficiently low contact resistance and high-performance increases. However, incorporation of dopants by Reduced Pressure-Chemical Vapor Deposition (RP-CVD) is limited to
ISSN:2151-2043
2151-2035
DOI:10.1149/MA2024-02322354mtgabs