Thin and Uniform Atomic Layer Deposited ZrO 2 Film on Functionalization Graphene

Graphene has been extensively studied as an outstanding material for flexible electronic devices and wearable biosensors due to its excellent mechanical flexibility, high carrier mobility, high surface to volume ratio and biocompatibility. In particular, for achieving graphene field-effect transisto...

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Veröffentlicht in:Meeting abstracts (Electrochemical Society) 2018-04, Vol.MA2018-01 (10), p.862-862
Hauptverfasser: Shin, Jeong Woo, Kang, Myung Hoon, Oh, Seongkook, Yang, Byung Chan, Park, Chan Hyung, Ahn, Hyo-Sok, Lee, Tae Hoon, An, Jihwan
Format: Artikel
Sprache:eng
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Zusammenfassung:Graphene has been extensively studied as an outstanding material for flexible electronic devices and wearable biosensors due to its excellent mechanical flexibility, high carrier mobility, high surface to volume ratio and biocompatibility. In particular, for achieving graphene field-effect transistors (GFETs) based sensors of high sensitivity and stability, the deposition of thin and uniform high-k dielectric films on graphene is important. Among the dielectric films deposited through various deposition methods, atomic layer deposited (ALD) dielectric films have advantages for depositing ultra-thin and uniform films at relatively low temperature (
ISSN:2151-2043
2151-2035
DOI:10.1149/MA2018-01/10/862