Electro-Less Deposition Using Metal Ion Based Reducing Agents: Potential Benefits and Applications in Semiconductor Manufacturing
Further miniaturization of interconnects and devices to keep up with Moore’s law in the 21 st century requires materials and process innovations. Electroplating, in a dual damascene process flow, has been the workhorse of the semiconductor industry for back-end-of-line metallization for the past two...
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Veröffentlicht in: | Meeting abstracts (Electrochemical Society) 2016-09, Vol.MA2016-02 (18), p.1535-1535 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Further miniaturization of interconnects and devices to keep up with Moore’s law in the 21
st
century requires materials and process innovations. Electroplating, in a dual damascene process flow, has been the workhorse of the semiconductor industry for back-end-of-line metallization for the past two decades. As wire dimensions shrink below 20 nm in future technology nodes, electrochemical deposition faces a few challenges. Good gap-fill of |
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ISSN: | 2151-2043 2151-2035 |
DOI: | 10.1149/MA2016-02/18/1535 |