(Invited) Vertical Nanowire FET Integration and Device Aspects

Over the past decades, aggressive and continuous transistor scaling according to Moore’s law has provided ever increasing device performance and density. For advanced (sub-)5nm nodes, to keep the growth pace, several options can be considered in terms of material choices, device architectures and circuits design. However, further cells scaling using conventional 2D layouts is becoming more and more challenged by key factors such as the physical limits on gate and contact placement and interconnect routing congestion. Vertical nanowire (VNW) devices appear particularly well placed to overcome some of these limitations, but require early process-design cross-disciplinary interactions to address the technological and design challenges/opportunities of moving from a 2D to a 3D layout configuration for CMOS. In this work, we will address some of these aspects, focusing first on a comparative analysis review of performance, parasitics and layout efficiency between VNWFETs (3D layout) and lateral nanowire (LNW) FETs or finFETs (2D layout), followed by a comprehensive overview of some key integration aspects regarding VNWFET devices fabrication. In VNWFETs, since the gate length (L gate ) is defined vertically, it can be relaxed without area penalty, which in turn also allows some relaxation in the NW diameter, while keeping optimum short-channel-effects control. This is an important advantage of the vertical device architecture as several theoretical studies predict mobility degradation below a certain NW dimension, which would also cancel off the gains of using high-mobility channels such as Ge or III-V over silicon [1,2]. Moreover, L gate relaxation is an important knob for variability optimization and leakage control, critical in scaled SRAMs. In terms of layout, VNWFETs can enable more compact cells [2,3], for instance by placing two pull-up transistors on the same row of a SRAM cell, saving around 30% area in comparison to a finFET-based SRAM [2]. A comparative simulation analysis in [4] of NAND library cells also suggests promising speed gains and power consumption reduction when switching from a 7nm Si-baseline finFET technology to 5nm Si VNWFETs. In addition, despite their potential for lower parasitic RC, VNWFETs asymmetry for source/drain wiring needs to be taken into account in circuit design and in processing for bottom access resistance optimization [2,5]. From an integration perspective, two main routes can be considered for device fabrication: cha