Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects

Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects

Chemical mechanical polishing (CMP) behavior of Cu/Ru/TiN barrier liner stack was investigated with a slurry comprising of silica abrasives, potassium permanganate (KMnO4), guanidine carbonate (GC) and benzotriazole (BTA) in the alkaline region. The corrosion and polishing behavior of the Cu, Ru and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ECS journal of solid state science and technology 2016-01, Vol.5 (5), p.P256-P263
Hauptverfasser: Sagi, K. V., Amanapu, H. P., Alety, S. R., Babu, S. V.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page P263
container_issue 5
container_start_page P256
container_title ECS journal of solid state science and technology
container_volume 5
creator Sagi, K. V.
Amanapu, H. P.
Alety, S. R.
Babu, S. V.
description Chemical mechanical polishing (CMP) behavior of Cu/Ru/TiN barrier liner stack was investigated with a slurry comprising of silica abrasives, potassium permanganate (KMnO4), guanidine carbonate (GC) and benzotriazole (BTA) in the alkaline region. The corrosion and polishing behavior of the Cu, Ru and TiN films in the solution consisting of the above additives were characterized by open circuit potential and potentiodynamic measurements, polishing rates, dissolution rates and contact angle measurements. A slurry comprising of 10 mM KMnO4, 1 wt% GC and 5 wt% Silica at pH 10 has shown adequate polish rates as well as low individual film corrosion. However, 1 mM BTA was needed to maintain the ΔECORR of both the Cu/Ru and Ru/TiN couples at
doi_str_mv 10.1149/2.0141605jss
format Article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_2_0141605jss</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>0141605JSS</sourcerecordid><originalsourceid>FETCH-LOGICAL-c236t-b6476811e26a4d7a2366fd8bc4a2e75439f29cb03d40fb50f77333e073437cd43</originalsourceid><addsrcrecordid>eNptkM9OAjEQxhujiQS5-QA9enCh_2iXo2wQSVYhgOdNt9vFIrSk7ZrwEj6zK5jowTnMTGZ--TLzAXCLUR9jNhqQPsIMczTchnABOgRzkqSCjy7_9NegF8IWtcFTJijpgM-FizIE0-zhQvu9tBtpZdTJWAZdwdWu8f4Io4NLXTVKw_im4VTuPqQ1CmbOexeMs9DVp03WDJbNYG1e4Fh6b7SHubFtXkWp3mHVeGM3MHteQGNP_Hgyz-HMRu2Vs1arGG7AVS13Qfd-ahe8Pk7W2VOSz6ez7CFPFKE8JiVngqcYa8Ilq4Rsh7yu0lIxSbQYMjqqyUiViFYM1eUQ1UJQSjUSlFGhKka74P6sq9oPgtd1cfBmL_2xwKj4trMgxa-dLX53xo07FFvXeNse9z_6BZH7dTU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects</title><source>Institute of Physics Journals</source><creator>Sagi, K. V. ; Amanapu, H. P. ; Alety, S. R. ; Babu, S. V.</creator><creatorcontrib>Sagi, K. V. ; Amanapu, H. P. ; Alety, S. R. ; Babu, S. V.</creatorcontrib><description>Chemical mechanical polishing (CMP) behavior of Cu/Ru/TiN barrier liner stack was investigated with a slurry comprising of silica abrasives, potassium permanganate (KMnO4), guanidine carbonate (GC) and benzotriazole (BTA) in the alkaline region. The corrosion and polishing behavior of the Cu, Ru and TiN films in the solution consisting of the above additives were characterized by open circuit potential and potentiodynamic measurements, polishing rates, dissolution rates and contact angle measurements. A slurry comprising of 10 mM KMnO4, 1 wt% GC and 5 wt% Silica at pH 10 has shown adequate polish rates as well as low individual film corrosion. However, 1 mM BTA was needed to maintain the ΔECORR of both the Cu/Ru and Ru/TiN couples at &lt;20 mV essential to inhibit any galvanic corrosion while still maintaining low corrosion rates for Cu, Ru and TiN films. The removal rate ratio of Ru:Cu with the optimized slurry was ∼0.8, minimizing the possibility of dishing.</description><identifier>ISSN: 2162-8769</identifier><identifier>EISSN: 2162-8769</identifier><identifier>EISSN: 2162-8777</identifier><identifier>DOI: 10.1149/2.0141605jss</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>ECS journal of solid state science and technology, 2016-01, Vol.5 (5), p.P256-P263</ispartof><rights>The Author(s) 2016. Published by ECS.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c236t-b6476811e26a4d7a2366fd8bc4a2e75439f29cb03d40fb50f77333e073437cd43</citedby><cites>FETCH-LOGICAL-c236t-b6476811e26a4d7a2366fd8bc4a2e75439f29cb03d40fb50f77333e073437cd43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.0141605jss/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,4010,27900,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Sagi, K. V.</creatorcontrib><creatorcontrib>Amanapu, H. P.</creatorcontrib><creatorcontrib>Alety, S. R.</creatorcontrib><creatorcontrib>Babu, S. V.</creatorcontrib><title>Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects</title><title>ECS journal of solid state science and technology</title><addtitle>ECS J. Solid State Sci. Technol</addtitle><description>Chemical mechanical polishing (CMP) behavior of Cu/Ru/TiN barrier liner stack was investigated with a slurry comprising of silica abrasives, potassium permanganate (KMnO4), guanidine carbonate (GC) and benzotriazole (BTA) in the alkaline region. The corrosion and polishing behavior of the Cu, Ru and TiN films in the solution consisting of the above additives were characterized by open circuit potential and potentiodynamic measurements, polishing rates, dissolution rates and contact angle measurements. A slurry comprising of 10 mM KMnO4, 1 wt% GC and 5 wt% Silica at pH 10 has shown adequate polish rates as well as low individual film corrosion. However, 1 mM BTA was needed to maintain the ΔECORR of both the Cu/Ru and Ru/TiN couples at &lt;20 mV essential to inhibit any galvanic corrosion while still maintaining low corrosion rates for Cu, Ru and TiN films. The removal rate ratio of Ru:Cu with the optimized slurry was ∼0.8, minimizing the possibility of dishing.</description><issn>2162-8769</issn><issn>2162-8769</issn><issn>2162-8777</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNptkM9OAjEQxhujiQS5-QA9enCh_2iXo2wQSVYhgOdNt9vFIrSk7ZrwEj6zK5jowTnMTGZ--TLzAXCLUR9jNhqQPsIMczTchnABOgRzkqSCjy7_9NegF8IWtcFTJijpgM-FizIE0-zhQvu9tBtpZdTJWAZdwdWu8f4Io4NLXTVKw_im4VTuPqQ1CmbOexeMs9DVp03WDJbNYG1e4Fh6b7SHubFtXkWp3mHVeGM3MHteQGNP_Hgyz-HMRu2Vs1arGG7AVS13Qfd-ahe8Pk7W2VOSz6ez7CFPFKE8JiVngqcYa8Ilq4Rsh7yu0lIxSbQYMjqqyUiViFYM1eUQ1UJQSjUSlFGhKka74P6sq9oPgtd1cfBmL_2xwKj4trMgxa-dLX53xo07FFvXeNse9z_6BZH7dTU</recordid><startdate>201601</startdate><enddate>201601</enddate><creator>Sagi, K. V.</creator><creator>Amanapu, H. P.</creator><creator>Alety, S. R.</creator><creator>Babu, S. V.</creator><general>The Electrochemical Society</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201601</creationdate><title>Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects</title><author>Sagi, K. V. ; Amanapu, H. P. ; Alety, S. R. ; Babu, S. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c236t-b6476811e26a4d7a2366fd8bc4a2e75439f29cb03d40fb50f77333e073437cd43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sagi, K. V.</creatorcontrib><creatorcontrib>Amanapu, H. P.</creatorcontrib><creatorcontrib>Alety, S. R.</creatorcontrib><creatorcontrib>Babu, S. V.</creatorcontrib><collection>IOP_英国物理学会OA刊</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sagi, K. V.</au><au>Amanapu, H. P.</au><au>Alety, S. R.</au><au>Babu, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects</atitle><jtitle>ECS journal of solid state science and technology</jtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2016-01</date><risdate>2016</risdate><volume>5</volume><issue>5</issue><spage>P256</spage><epage>P263</epage><pages>P256-P263</pages><issn>2162-8769</issn><eissn>2162-8769</eissn><eissn>2162-8777</eissn><abstract>Chemical mechanical polishing (CMP) behavior of Cu/Ru/TiN barrier liner stack was investigated with a slurry comprising of silica abrasives, potassium permanganate (KMnO4), guanidine carbonate (GC) and benzotriazole (BTA) in the alkaline region. The corrosion and polishing behavior of the Cu, Ru and TiN films in the solution consisting of the above additives were characterized by open circuit potential and potentiodynamic measurements, polishing rates, dissolution rates and contact angle measurements. A slurry comprising of 10 mM KMnO4, 1 wt% GC and 5 wt% Silica at pH 10 has shown adequate polish rates as well as low individual film corrosion. However, 1 mM BTA was needed to maintain the ΔECORR of both the Cu/Ru and Ru/TiN couples at &lt;20 mV essential to inhibit any galvanic corrosion while still maintaining low corrosion rates for Cu, Ru and TiN films. The removal rate ratio of Ru:Cu with the optimized slurry was ∼0.8, minimizing the possibility of dishing.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.0141605jss</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2162-8769
ispartof ECS journal of solid state science and technology, 2016-01, Vol.5 (5), p.P256-P263
issn 2162-8769
2162-8769
2162-8777
language eng
recordid cdi_crossref_primary_10_1149_2_0141605jss
source Institute of Physics Journals
title Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T16%3A24%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Potassium%20Permanganate-Based%20Slurry%20to%20Reduce%20the%20Galvanic%20Corrosion%20of%20the%20Cu/Ru/TiN%20Barrier%20Liner%20Stack%20during%20CMP%20in%20the%20BEOL%20Interconnects&rft.jtitle=ECS%20journal%20of%20solid%20state%20science%20and%20technology&rft.au=Sagi,%20K.%20V.&rft.date=2016-01&rft.volume=5&rft.issue=5&rft.spage=P256&rft.epage=P263&rft.pages=P256-P263&rft.issn=2162-8769&rft.eissn=2162-8769&rft_id=info:doi/10.1149/2.0141605jss&rft_dat=%3Ciop_cross%3E0141605JSS%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true