InGaN Light-Emitting Diode with a Photochemically Oxidized GaN Nanorod Structure

InGaN light-emitting diodes (LEDs) embedded with air voids and a gallium oxide (Ga2O3) layer were fabricated through a photoelectrochemical (PEC) oxidation process. The epitaxial lateral overgrowth process occurred at the PEC oxidized nanorods to form the air-voids structure. The light output power...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ECS journal of solid state science and technology 2013-01, Vol.2 (4), p.R65-R69
Hauptverfasser:	Yang, Chung-Chieh, Lin, Chia-Feng, Ren-Hao, Jiang, Shieh, Bing-Cheng, Cheng, Po-Fu, Tseng, Wang-Po, Dai, Jing-Jie
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!