InGaN Light-Emitting Diode with a Photochemically Oxidized GaN Nanorod Structure

InGaN light-emitting diodes (LEDs) embedded with air voids and a gallium oxide (Ga2O3) layer were fabricated through a photoelectrochemical (PEC) oxidation process. The epitaxial lateral overgrowth process occurred at the PEC oxidized nanorods to form the air-voids structure. The light output power of the treated LED with the air-voids structure had a 70% enhancement compared with a non-treated LED at a 20 mA operation current. High internal quantum efficiency and low piezoelectric field were measured in the treated LED structure through a bias-dependent micro-photoluminescence measurement. The strain-induced piezoelectric field in InGaN active layer was partially reduced by forming the Ga2O3 layer and the air-voids structure.