Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al 2 O 3 -Capped GaN and GaN/AlGaN/GaN Heterostructure

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Veröffentlicht in:	ECS journal of solid state science and technology 2015, Vol.4 (9), p.P364-P368
Hauptverfasser:	Duan, T. L., Pan, J. S., Ang, D. S.
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Sprache:	eng
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al 2 O 3 -Capped GaN and GaN/AlGaN/GaN Heterostructure
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