Resistance Drift in Melt-Quenched Ge 2 Sb 2 Te 5 Phase Change Memory Line Cells at Cryogenic Temperatures

We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ∼70–100 nm wide lateral Ge 2 Sb 2 Te 5 (GST) line cells. The cells were amorphized using 1.5–2.5 V pulses with ∼50–100 ns duration leading to ∼0.4–1.1 mA peak reset currents resulting in amorphized lengths between ∼50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 h duration. Drift coefficients range between ∼0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. These results point to charge trapping and de-trapping events as the cause of resistance drift. Resistance drift measurements in a set of narrow and wider Ge2Sb2Te5 line cells at 80–300 K. Significant temporal and device-to-device variability in determination of resistance drift coefficients. Amorphization pulse characterization and correlation of amorphized length to the cell current during melt-quench process. Improved experimental setup for extremely low-leakage and fast measurements.