Application of InP Quantum Dot film by Photolithography Technology on a Micro-LED Display

The technical of realizing full-color display by monochromatic integrated 100 × 100 blue Micro-LED array exciting InP quantum dot color conversion layer is researched in this study. Using photolithography technology to prepare color film on a separate glass cover glass has the advantages of better a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ECS journal of solid state science and technology 2023-04, Vol.12 (4), p.46003
Hauptverfasser: Tian, Wenya, Wu, Tianxiang, Wu, Yongshuan, Xiao, Jinqing, Wang, Pengkai, Li, Junhui
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The technical of realizing full-color display by monochromatic integrated 100 × 100 blue Micro-LED array exciting InP quantum dot color conversion layer is researched in this study. Using photolithography technology to prepare color film on a separate glass cover glass has the advantages of better accuracy and display resolution. The optimum thickness 12 μ m of the quantum dot photoresist (QDPR) was verified and 10 μ m black matrix (BM) was proposed to reduce the light crosstalk between different sub-pixels. The thickness of color filter 1 ± 0.4 μ m was made successfully between the QDPR and the cover glass, which can greatly can significantly increase the display color gamut from 78.7% to 100.8% NTSC. The red and green brightness conversion efficiency reach up to 78.1% and 296.5% respectively. Representative RGB monochromatic pictures with 100% high yield were displayed successfully.
ISSN:2162-8769
2162-8777
DOI:10.1149/2162-8777/acc5b0