Thin Film Challenges in 28nm Technology Node

During 28nm technology node process development, a couple of dozens new thin films and advanced thin film processes have been introduced to meet needs of the CMOS circuit performance. These new films and processes are used for micro-patterning, gap-fill, high-k metal gate (HKMG) work function metals and electrodes, electrical and reliability performance, etc. This article shall report the latest progress in thin film developments at the leading Chinese semiconductor company, SMIC. Some key challenges in the areas mentioned above will be elaborated and various new thin film requirements will be discussed. Examples of some thin film process developments, especially in the micro-patterning, Metal Gate and STI and ILD gap-fill, and HKMG work function tuning, will be provided, and the preliminary results will be presented.