(Invited) High Throughput Atomic Layer Deposition for Encapsulation of Large Area Electronics

Fundamental aspects of the deployment of ALD deposited barriers in high volume manufacturing are reviewed. Based on an analysis of the limiting factors of in conventional cross-flow reactors, a parallel precursor wave technology system has been developed.

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1. Verfasser:	Kools, Jacques
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Sprache:	eng
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description	Fundamental aspects of the deployment of ALD deposited barriers in high volume manufacturing are reviewed. Based on an analysis of the limiting factors of in conventional cross-flow reactors, a parallel precursor wave technology system has been developed.
doi_str_mv	10.1149/1.3633668
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identifier	ISSN: 1938-5862
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	(Invited) High Throughput Atomic Layer Deposition for Encapsulation of Large Area Electronics
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