(Invited) High Throughput Atomic Layer Deposition for Encapsulation of Large Area Electronics

(Invited) High Throughput Atomic Layer Deposition for Encapsulation of Large Area Electronics

Fundamental aspects of the deployment of ALD deposited barriers in high volume manufacturing are reviewed. Based on an analysis of the limiting factors of in conventional cross-flow reactors, a parallel precursor wave technology system has been developed.

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Bibliographische Detailangaben
1. Verfasser: Kools, Jacques
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:Fundamental aspects of the deployment of ALD deposited barriers in high volume manufacturing are reviewed. Based on an analysis of the limiting factors of in conventional cross-flow reactors, a parallel precursor wave technology system has been developed.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3633668