Effect of Various Surface Treatments on Chemical Bonding State at La 2 O 3 /In 0.53 Ga 0.47 As and on In 0.53 Ga 0.47 As Surface

We have investigated the influence of HF, (NH 4 ) 2 S and Hexa Methy Disilazane (HMDS) treatments on thermal stability of high-k/In 0.53 Ga 0.47 As interface and the chemical bonding states at high-k/In 0.53 Ga 0.47 As interface by the X-ray (hv= 1486.6eV) photoemission spectroscopy. The control of the oxide formation on In 0.53 Ga 0.47 As surface was tried by surface treatment. Analyses of As 3d, Ga 3p, In 3d, S 1s, Si 2p, N 1s, O 1s and C 1s spectra show that the oxidation of In 0.53 Ga 0.47 As was suppressed by various surface treatments.