(Invited) GaN-on-Si For High-Voltage Applications

(Invited) GaN-on-Si For High-Voltage Applications

This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate are identified and addressed. A breakdown voltage...

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Hauptverfasser: Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Marcon, Denis, Geens, Karen, Kang, Xuanwu, Vandenplas, Erwin, Viaene, John, Leys, Maarten, Cheng, Kai, Sijmus, Bram, Decoutere, Stefaan, Borghs, Gustaaf
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate are identified and addressed. A breakdown voltage as high as 1050 V and a specific on-resistance as low as 2 mOhm⋅cm2 have been achieved.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3631489