Modeling Electromigration Lifetimes of Copper Interconnects

A model for early failure due to electromigration in copper dual-damascene interconnects is proposed. The model is based on analytical expressions obtained from solutions of electromigration stress build-up assuming slit void growth under the interconnect vias. It is demonstrated that the model satisfactorily describes the complex physics of void nucleation and growth of the electromigration damage. Furthermore, it is shown that the simulation results provide reasonable estimates for early electromigration failures.