Single Crystal Silicon Thin Film on Polymer Substrate by Double Layer Transfer Method
We report discovery of new method to transfer a single crystal silicon thin film onto a bendable polymer substrate by using layer transfer process. The method includes creation of mechanically weakened layer 100 nm - 600 nm below the Si wafer surface using boron and hydrogen ion implantations. Silic...
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Hauptverfasser: | , |
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report discovery of new method to transfer a single crystal silicon thin film onto a bendable polymer substrate by using layer transfer process. The method includes creation of mechanically weakened layer 100 nm - 600 nm below the Si wafer surface using boron and hydrogen ion implantations. Silicon mother wafer is then pre-bonded to glass and exfoliated. Exfoliation divides the glass-silicon assembly into weakly bound Si thin film on glass and leftover mother Si wafer. Then the silicon thin film was transferred from glass substrate into a polymer substrate. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.3570786 |