Evaluation of Interface Trap Density in Advanced SOI MOSFETs

Evaluation of Interface Trap Density in Advanced SOI MOSFETs

The density of traps at the top interface is difficult to assess in advanced SOI MOSFETs with high-K dielectric and ultrathin film. Searching for a characterization strategy, we compare various approaches: front-channel subthreshold slope, back-channel slope, and coupling coefficient between the fro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bawedin, Maryline, Cristoloveanu, Sorin, Chang, Sungjae, Valenza, Matteo, Martinez, Frederic, Lee, Jonghyun
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electronics
Engineering Sciences
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The density of traps at the top interface is difficult to assess in advanced SOI MOSFETs with high-K dielectric and ultrathin film. Searching for a characterization strategy, we compare various approaches: front-channel subthreshold slope, back-channel slope, and coupling coefficient between the front and back channels. The back-channel slope shows the largest variation with the front trap density. However, the resolution may not be sufficient for MOSFETs with very thin buried oxide.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3570783