Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process

Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process

This paper presents a new wafer bonding process used for back side illuminated (BSI) image sensors manufacturing, with high bonding energy of 2 J/m2, without peripheral edge bonding voids that occur with the standard process.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Castex, Arnaud, Broekaart, Marcel, Thieffry, Stephane, Landry, Karine, Fontanière, Richard, Lagahe, Chrystelle
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents a new wafer bonding process used for back side illuminated (BSI) image sensors manufacturing, with high bonding energy of 2 J/m2, without peripheral edge bonding voids that occur with the standard process.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3568856