Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS Technology
FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the Fin...
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creator | Yamashita, Tenko Basker, Veeraraghavan Standaert, Theodorus Yeh, Chun-Chen Faltermeier, Johnathan Yamamoto, Toyoji Lin, Chung-hsun Bryant, Andres Maitra, Kingsuk Kulkarni, Pranita Kanakasabapathy, Sivananda Sunamura, Hiroshi Wang, Junli Jagannathan, Hemanth Inada, Atsuro Cho, Jin Miller, Robert Doris, Bruce Paruchuri, Vamsi Bu, Huiming Khare, Mukesh O'Neill, James Leobandung, Effendi |
description | FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the FinFET unique challenges are presented. High drive currents have been obtained for both nFET and pFET. All these results show FinFET is the most promising candidate for 14nm node CMOS technology. |
doi_str_mv | 10.1149/1.3567563 |
format | Conference Proceeding |
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identifier | ISSN: 1938-5862 |
ispartof | ECS transactions, 2011, Vol.34 (1), p.81-86 |
issn | 1938-5862 1938-6737 |
language | eng |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS Technology |
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