Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS Technology

FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the Fin...

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Hauptverfasser: Yamashita, Tenko, Basker, Veeraraghavan, Standaert, Theodorus, Yeh, Chun-Chen, Faltermeier, Johnathan, Yamamoto, Toyoji, Lin, Chung-hsun, Bryant, Andres, Maitra, Kingsuk, Kulkarni, Pranita, Kanakasabapathy, Sivananda, Sunamura, Hiroshi, Wang, Junli, Jagannathan, Hemanth, Inada, Atsuro, Cho, Jin, Miller, Robert, Doris, Bruce, Paruchuri, Vamsi, Bu, Huiming, Khare, Mukesh, O'Neill, James, Leobandung, Effendi
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container_issue 1
container_start_page 81
container_title
container_volume 34
creator Yamashita, Tenko
Basker, Veeraraghavan
Standaert, Theodorus
Yeh, Chun-Chen
Faltermeier, Johnathan
Yamamoto, Toyoji
Lin, Chung-hsun
Bryant, Andres
Maitra, Kingsuk
Kulkarni, Pranita
Kanakasabapathy, Sivananda
Sunamura, Hiroshi
Wang, Junli
Jagannathan, Hemanth
Inada, Atsuro
Cho, Jin
Miller, Robert
Doris, Bruce
Paruchuri, Vamsi
Bu, Huiming
Khare, Mukesh
O'Neill, James
Leobandung, Effendi
description FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the FinFET unique challenges are presented. High drive currents have been obtained for both nFET and pFET. All these results show FinFET is the most promising candidate for 14nm node CMOS technology.
doi_str_mv 10.1149/1.3567563
format Conference Proceeding
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title Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS Technology
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