Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 2011, Vol.158 (4), p.H358
Hauptverfasser:	Lieten, R. R., Afanas’ev, V. V., Thoan, N. H., Degroote, S., Walukiewicz, W., Borghs, G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	4
container_start_page	H358
container_title	Journal of the Electrochemical Society
container_volume	158
creator	Lieten, R. R. Afanas’ev, V. V. Thoan, N. H. Degroote, S. Walukiewicz, W. Borghs, G.
description
doi_str_mv	10.1149/1.3545703
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3545703</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3545703</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-39a1b2d6a5a7e6f336c5ff48a384316cf0b394e06572b115e15db62dd4cfbcc63</originalsourceid><addsrcrecordid>eNotkLFOwzAURT2ARCkM_IFXhhQ_P9tJRoigVCogQTtHjmPTQGJXdhjy9wTR6eoM9wyHkBtgKwBR3sEKpZA5wzOyYAwwE0rCBblM6WtGKES-IO8v1hy079KQaHD0wxzCOH5P9EHH2NlIq-DHGHoaPPXZbjpaurZxmA8_A92nzn_OjK-CbvxoY68nG9MVOXe6T_b6tEuyf3rcVc_Z9m29qe63meFcjhmWGhreKi11bpVDVEY6JwqNhUBQxrEGS2GZkjlvAKQF2TaKt60wrjFG4ZLc_ntNDClF6-pj7AYdpxpY_ReghvoUAH8B8rZPQQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers</title><source>IOP Publishing Journals</source><creator>Lieten, R. R. ; Afanas’ev, V. V. ; Thoan, N. H. ; Degroote, S. ; Walukiewicz, W. ; Borghs, G.</creator><creatorcontrib>Lieten, R. R. ; Afanas’ev, V. V. ; Thoan, N. H. ; Degroote, S. ; Walukiewicz, W. ; Borghs, G.</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.3545703</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H358</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-39a1b2d6a5a7e6f336c5ff48a384316cf0b394e06572b115e15db62dd4cfbcc63</citedby><cites>FETCH-LOGICAL-c225t-39a1b2d6a5a7e6f336c5ff48a384316cf0b394e06572b115e15db62dd4cfbcc63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Lieten, R. R.</creatorcontrib><creatorcontrib>Afanas’ev, V. V.</creatorcontrib><creatorcontrib>Thoan, N. H.</creatorcontrib><creatorcontrib>Degroote, S.</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Borghs, G.</creatorcontrib><title>Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAURT2ARCkM_IFXhhQ_P9tJRoigVCogQTtHjmPTQGJXdhjy9wTR6eoM9wyHkBtgKwBR3sEKpZA5wzOyYAwwE0rCBblM6WtGKES-IO8v1hy079KQaHD0wxzCOH5P9EHH2NlIq-DHGHoaPPXZbjpaurZxmA8_A92nzn_OjK-CbvxoY68nG9MVOXe6T_b6tEuyf3rcVc_Z9m29qe63meFcjhmWGhreKi11bpVDVEY6JwqNhUBQxrEGS2GZkjlvAKQF2TaKt60wrjFG4ZLc_ntNDClF6-pj7AYdpxpY_ReghvoUAH8B8rZPQQ</recordid><startdate>2011</startdate><enddate>2011</enddate><creator>Lieten, R. R.</creator><creator>Afanas’ev, V. V.</creator><creator>Thoan, N. H.</creator><creator>Degroote, S.</creator><creator>Walukiewicz, W.</creator><creator>Borghs, G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2011</creationdate><title>Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers</title><author>Lieten, R. R. ; Afanas’ev, V. V. ; Thoan, N. H. ; Degroote, S. ; Walukiewicz, W. ; Borghs, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-39a1b2d6a5a7e6f336c5ff48a384316cf0b394e06572b115e15db62dd4cfbcc63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lieten, R. R.</creatorcontrib><creatorcontrib>Afanas’ev, V. V.</creatorcontrib><creatorcontrib>Thoan, N. H.</creatorcontrib><creatorcontrib>Degroote, S.</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Borghs, G.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lieten, R. R.</au><au>Afanas’ev, V. V.</au><au>Thoan, N. H.</au><au>Degroote, S.</au><au>Walukiewicz, W.</au><au>Borghs, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2011</date><risdate>2011</risdate><volume>158</volume><issue>4</issue><spage>H358</spage><pages>H358-</pages><issn>0013-4651</issn><doi>10.1149/1.3545703</doi></addata></record>
fulltext	fulltext
identifier	ISSN: 0013-4651
ispartof	Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H358
issn	0013-4651
language	eng
recordid	cdi_crossref_primary_10_1149_1_3545703
source	IOP Publishing Journals
title	Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-18T13%3A06%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanisms%20of%20Schottky%20Barrier%20Control%20on%20n-Type%20Germanium%20Using%20Ge3N4%20Interlayers&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Lieten,%20R.%20R.&rft.date=2011&rft.volume=158&rft.issue=4&rft.spage=H358&rft.pages=H358-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.3545703&rft_dat=%3Ccrossref%3E10_1149_1_3545703%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true