Cyclic Voltammetry Study for Electrodeposition Cu(In 1-x ,Ga x )Se 2 Thin Films

A systematic study by cyclic voltammetry, and chemical and structural characterization to achieve electrodepositing Cu(In1-x,Gax)Se2 (CIGS) thin films is described. Mo foil substrates from low concentration buffered baths containing CuCl2, InCl2, GaCl2 and H2SeO3 were used. The electrochemical study shows the formation of CIGS on Mo substrate, the reduction of In and Ga in their metallic form in interval of to vs. SCE from Cu-Se, Cu-In-Se, Cu-Ga-Se, and Cu-In-Ga-Se baths is described in detail. Shows that the amount of Ga does not increase by increasing to negative potentials, however the amount of In increases and is further encouraged the growth of CuInSe2 films in a Cu-In-Ga-Se bath. All as-deposited films exhibit low crystallinity and CuIn0.81Ga0.19Se2 thin films were electrodeposited.