(Invited) Strain Scaling and Modeling for FETs
Stress engineering overview is given including the reasons behind its ongoing evolution. Some aspects of the stress-induced defect formation are discussed. Guidelines for avoiding such defects are proposed based on stress evolution in and around transistors during the process flow. Stress-induced pe...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!