(Invited) Recent Insights in the Diffusion of Boron in Silicon and Germanium

Experimental evidences and microscopic modelling of the mechanism of B diffusion in Si and Ge are given. In both the lattices B migrates by the mediation of self-interstitials (Is). In Si, B diffusion occurs mainly through the formation of a BI0 complex, after interactions of BS- with I0 or with I++ in intrinsic condition or high hole densities, respectively, followed by a proper charge exchange. A small contribution of the BI- complex is visible only under n-type doping, when BS- and I0 bind nonetheless the pairing of B with the n-dopants. Also in Ge, the B diffusion mechanism has been fixed, even if to a lower extent, revealing the need of self-interstitials to start the B motion. We evidenced the occurrence of the proton radiation enhanced diffusion (RED) and of the transient enhanced diffusion (TED) of B, modeling both the cases with the central role of Is.