200 mm Silicon on Porous Layer Substrates Made by the Smart Cut Technology for Double Layer Transfer Applications

Silicon On Porous Layer (SOPL) substrate was elaborated by applying the Smart Cut{trade mark, serif} technology to silicon substrate having a superficial porous Si layer. Porous Si layer morphology was characterized after anodisation process. A single crystalline/porous Si bilayer was transferred onto a handling wafer to form SOI like structure. Subsequent bonding to a final wafer and separation induced in the fragile embedded porous Si layer led to the double-transfer of the single crystalline Si layer. Changes in mechanical properties and chemical composition of the embedded porous silicon layer as a function of the annealing temperature were also determined. Thickness homogeneity of the transferred thin Si layer was estimated after SOPL fabrication and after double-transfer achievement. The perfect crystallinity of the active Si layer was conserved during the whole process. SOI-like structure fabrication and subsequent separation of thin high quality Si film are reported in order to demonstrate adequacy of SOPL with post device post processing substrate removal.